Advances in Research and Development, Volume 23: Modeling of by Maurice H. Francombe, John L. Vossen

By Maurice H. Francombe, John L. Vossen

Major growth has happened over the past few years in machine applied sciences and those are surveyed during this new quantity. integrated are Si/(Si-Ge) heterojunctions for high-speed built-in circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector constructions operated within the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.

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Extra info for Advances in Research and Development, Volume 23: Modeling of Film Deposition for Microelectronic Applications (Thin Films)

Sample text

In contrast, the two-site initial adsorption reaction (15) proposcd by Gates et al. (115) is strongly supported by experimental evidence. I favor its use in kinetic models tor that reason. However, all the decomposition schemes lead to the same basic result: Thc availability of vacant sites for adsorption is determined by the balance betwccn adsorption of silane and desorption of hydrogen. The presence of surface hydrogen leads to differences in the surface structure during growth as observed by STM.

Gates, C. M. Greenlief, and I). B. Beach, J. ('hem. Phys. ) Despite this fact, the SiH~ + signal decreases steadily with increasing temperature. This suggests a reaction of the form SiH~* + *---* H* + Sill2* (16) where the first-order kinetics are supported by detailed analysis of the timeresolved SSIMS data. At higher temperatures, decomposition of SiH~* is observed by two different processes depending on the initial silane dose. W. GREVE coverage, the [~2 decomposition peak is observed (Fig. 16, top), which is characteristic of the dihydride decomposition as observed on atomic hydrogen-saturated surfaces.

This could be an important omission, as most growth from dichlorosilane takes place in a hydrogen ambient. The growth of silicon from dichlorosilane in 2-10 torr total pressure range has been modeled by Hierlemann et al. (146). The calculations were performed using the JIPELEC reactor geometry and included both gas phase and surface reactions (including adsorption of hydrogen from the carrier gas). At low temperatures (T < 800~ gas phase reactions do not need to be considered and it was assumed that dichlorosilane decomposed directly on the wafer surface.

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